Browse by Subject program/erase (P/E) speed

Showing results 1 to 2 of 2

1
Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application

Ryu, Seong-Wan; Lee, Jong-Won; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyuresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.3, pp.377 - 382, 2009-03

2
Fluorine Effects Originating from the CVD W Process on Charge-Trap Flash Memory Cells

Moon, Jung Min; Lee, Tae Yoon; Ahn, Hyunjun; Lee, Tae In; Hwang, Wan Sik; Cho, Byung-Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp.378 - 382, 2018-12

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