Browse by Subject nonvolatile memory
Showing results 1 to 29 of 29
| A 32-KB standard CMOS antifuse one-time programmable ROM embedded in a 16-bit microcontroller Cha, HK; Yun, I; Kim, J; So, BC; Chun, K; Nam, I; Lee, Kwyro, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.41, pp.2115 - 2124, 2006-09 |
| An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Baek, Seung-Hyub; Han, Jae-Hoon; Kim, Sang-Hyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.4, pp.2080 - 2087, 2022-04 |
| Application of ZnO nanocrystals as a nonvolatile memory = ZnO 나노결정을 이용한 비휘발성 메모리 소자의 제작과 특성 평가link Yoon, Tae-Eung; 윤태응; et al, 한국과학기술원, 2007 |
| Effects of barrier layers on the electrical behaviors of phase-change memory devices using Sb-rich Ge-Sb-Te films Yoon, Sung-Min; Choi, Kyu-Jeong; Park, Sang-Hee Ko; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon, INTEGRATED FERROELECTRICS, v.93, no.1, pp.75 - 82, 2007 |
| Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Jang, Moon-Gyu; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.78 - 81, 2009-01 |
| Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel Moon, Dong-Il; Kim, Jee Yeon; Moon, Joon-Bae; Kim, Dong-Oh; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.60 - 65, 2014-01 |
| Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring Kim, Woo-Young; Lee, Hee-Chul, IEICE TRANSACTIONS ON ELECTRONICS, v.E95C, no.5, pp.860 - 864, 2012-05 |
| Flexible unified memory for multi-functioning nonvolatile memory and ultrafast 1T-DRAM = 비휘발성 메모리와 초고속 1T-DRAM의 복합기능을 수행하는 플렉시블 퓨전메모리link Choi, Ji-Min; 최지민; et al, 한국과학기술원, 2015 |
| Fullerene-Derivative-Embedded Nanogap Field-Effect-Transistor and Its Nonvolatile Memory Application Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Seo, Myung-Soo; Yun, Chang-Hun; Yoo, Seung-Hyup; Choi, Yang-Kyu, SMALL, v.6, no.15, pp.1617 - 1621, 2010-08 |
| Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications Jeong, Hu-Young; Kim, Jong-Yun; Kim, Jeong-Won; Hwang, Jin-Ok; Kim, Ji-Eun; Lee, Jeong-Yong; Yoon, Tae-Hyun; et al, NANO LETTERS, v.10, no.11, pp.4381 - 4386, 2010-11 |
| High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for NOR-type Flash Memory Choi, Sung-Jin; Han, Jin-Woo; Jang, Moon-Gyu; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.3, pp.265 - 268, 2009-03 |
| Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory Yang, Yiming; Peng, Xingyue; Kim, Hong-Seok; Kim, Taeho; Jeon, Sanghun; Kang, Hang Kyu; Choi, Wonjun; et al, NANO LETTERS, v.15, no.9, pp.5875 - 5882, 2015-09 |
| Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM Yoon, Jae Seok; Tewari, Amit; Shin, Changhwan; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079, 2019-07 |
Interfacial Dipole Modulation Device With SiOX Switching Species Kim, Giuk; Kim, Taeho; Jeon, Sanghun, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.57 - 60, 2021 |
| Internal Bias Field in Ferroelectric Polymer Thin Film for Nonvolatile Memory Applications Kim, Woo-Young; Ka, Du-Youn; Kim, Dong-Soo; Kwon, Il-Woong; Kim, Sang-Youl; Lee, Yong-Soo; Lee, Hee-Chul, IEEE ELECTRON DEVICE LETTERS, v.31, no.5, pp.482 - 484, 2010-05 |
| Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS2 and Ultrathin Polymer Dielectrics Yang, Sang Cheol; Choi, Junhwan; Jang, Byung Chul; Hong, Woonggi; Shim, Gi Woong; Yang, Sang Yoon; Im, Sung Gap; et al, ADVANCED ELECTRONIC MATERIALS, v.5, no.5, pp.1800688, 2019-05 |
| Mechanically Operated Random Access Memory (MORAM) Based on an Electrostatic Microswitch for Nonvolatile Memory Applications Jang, Weon-Wi; Lee, Jeong-Oen; Yang, Hyun-Ho; Yoon, Jun-Bo, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.10, pp.2785 - 2789, 2008-10 |
| Morphable DRAM Cache Design for Hybrid Memory Systems Cha, Sanghoon; Kim, Bokyeong; Park, Chang Hyun; Huh, Jaehyuk, ACM TRANSACTIONS ON ARCHITECTURE AND CODE OPTIMIZATION, v.16, no.3, 2019-08 |
| Nanomechanical Encoding Method Using Enhanced Thermal Concentration on a Metallic Nanobridge Lee, Jeong-Oen; Choi, Kwang-Wook; Choi, Seon-Jin; Kang, Min-Ho; Seo, Min-Ho; Kim, Il-Doo; Yu, Kyoungsik; et al, ACS NANO, v.11, no.8, pp.7781 - 7789, 2017-08 |
| Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2Stack Channel Park, Sam; Jeong, Yeonsu; Jin, Hye-Jin; Park, Junkyu; Jang, Hyenam; Lee, Sol; Huh, Woong; et al, ACS NANO, v.14, no.9, pp.12064 - 12071, 2020-09 |
| Nonvolatile memory characteristics of NMOSFET with Ag nanocrystals synthesized via a thermal decomposition process for uniform device distribution Ryu, Seong-Wan; Bin Mo, Chan; Hong, Soon Hyung; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.2, pp.145 - 150, 2008-03 |
| Novel structures for a 2-bit per cell of nonvolatile memory using an asymmetric double gate Kim, KH; Lee, H; Choi, Yang-Kyu, IEICE TRANSACTIONS ON ELECTRONICS, v.E89C, no.5, pp.578 - 584, 2006-05 |
| Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor Yoon, Sung-Min; Yang, Shinhyuk; Ryu, Min-Ki; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.7, pp.2135 - 2142, 2011-07 |
| P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Kim, Sung-Ho; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.8, pp.1737 - 1742, 2010-08 |
| Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing Kim, Taeho; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1771 - 1773, 2018-05 |
| Refinement of Unified Random Access Memory Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04 |
| Tunable and Reconfigurable Logic Gates With Electrolyte-Gated Transistor Array Co-Integrated With Neuromorphic Synapses Yu, Ji-Man; Lee, Chungryeol; Han, Joon-Kyu; Lee, Sang-Won; Kim, Moon-Seok; Im, Sung Gap; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.8, pp.4231 - 4235, 2022-08 |
| Zinc nanodots formation by low-temperature photo metal-organic chemical vapor deposition method for memory application Bang, K; Kim, S; Kwak, J; Lim, Koeng Su, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.45, pp.L508 - L511, 2006-05 |
| 그래핀 산화물 박막 기반의 저항변화 메모리에서의 금속 전극의 영향 = Effects of metal electrodes on graphene oxide thin film based resistive switching memorylink 김성규; Kim, Sung-Kyu; et al, 한국과학기술원, 2012 |
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