Browse by Subject intrinsic gate delay

Showing results 1 to 1 of 1

1
Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs)

Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09

Discover

Type

. next

Open Access

Date issued

. next

Subject

. next

rss_1.0 rss_2.0 atom_1.0