Browse by Subject interface states

Showing results 1 to 11 of 11

1
Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

Shin, Byungha; Clemens, Jonathon B.; Kelly, Michael A.; Kummel, Andrew C.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.25, 2010-06

2
Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films

Jeong, Hu Young; Lee, JeongYong; Choi, Sung-Yool, APPLIED PHYSICS LETTERS, v.97, no.4, 2010-07

3
HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer

Maeng, W. J.; Gu, Gil Ho; Park, C. G.; Lee, Kayoung; Lee, Taeyoon; Kim, Hyungjun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.G109 - G113, 2009

4
High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.95, no.7, 2009-08

5
Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride

Lee, Kayoung; Liu, En-Shao; Watanabe, Kenji; Taniguchi, Takashi; Nah, Junghyo, ACS APPLIED MATERIALS & INTERFACES, v.10, no.48, pp.40985 - 40989, 2018-12

6
Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

Chong, PF; Cho, Byung Jin; Chor, EF; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2181 - 2185, 2000-04

7
Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor

Kim, Sung-Ho; Choi, Sung-Jin; Jang, Moon-Gyu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08

8
Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

Lee, JI; Nam, HD; Choi, WJ; Yu, BY; Song, JD; Hong, Songcheol; Noh, SK; et al, CURRENT APPLIED PHYSICS, v.6, no.6, pp.1024 - 1029, 2006-10

9
Parasitic S/D resistance effects on hot-carrier reliability in body-tied FinFETs

Han, JW; Lee, CH; Park, D; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.27, no.6, pp.514 - 516, 2006-06

10
Photonic topological Lifshitz interfaces

Piao, Xianji; Shin, Jonghwa; Park, Namkyoo, NANOPHOTONICS, v.11, no.6, pp.1211 - 1217, 2022-03

11
Seebeck coefficient of a quantum confined, high-electron-density electron gas in SrTiO3

Cain, Tyler A.; Lee, Sung Bin; Moetakef, Pouya; Balents, Leon; Stemmer, Susanne; Allen, S. James, APPLIED PHYSICS LETTERS, v.100, no.16, 2012-04

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