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Showing results 1 to 2 of 2

1
Endurance characteristics and degradation mechanism of polysilicon thin film transistor EEPROMs with electron cyclotron resonance NaO-plasma gate oxide

Lee, NI; Lee, JW; Han, Chul-Hi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.4B, pp.2215 - 2218, 1999-04

2
Hot-carrier lifetime dependence on channel width and silicon recess depth in N-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure

Chim, WK; Cho, Byung Jin; Yue, JMP, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.1, pp.47 - 53, 2002-01

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