Showing results 1 to 4 of 4
A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect Lee, Jaelin; Kim, Suna; Hong, Jong-Phil; Lee, Sang-Gug, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.4, pp.381 - 386, 2013-08 |
(A) new resistance model for a schottky barrier diode in CMOS including n-well thickness effect = CMOS 쇼트키 배리어 다이오드를 위한 n-well 두께 효과를 포함한 저항 모델link Lee, Jaelin; 이재린; et al, 한국과학기술원, 2013 |
Resistance analysis and device design guideline for graphene RF transistors Hong, Seul Ki; Jeon, Sang Chul; Hwang, Wan Sik; Cho, Byung Jin, 2D MATERIALS, v.2, no.3, 2015-07 |
Straight coupled transmission-line cell for generating standard electromagnetic fields Yun, J; Lee, HyuckJae; Hwang, H, IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, v.44, no.4, pp.515 - 521, 2002-11 |
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