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Showing results 1 to 5 of 5

1
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

Sun, Yuanping; Sun, Yuanping; Cho, Yong-Hoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.1, pp.128 - 132, 2010-07

2
ELECTRONIC HEAT-CAPACITY IN QUANTUM WIRES AND DOTS UNDER MAGNETIC-FIELDS

OH, JH; Chang, Kee-Joo; IHM, G; LEE, SJ, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.28, pp.132 - 135, 1995-02

3
Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties

Kwon, SY; Kim, HJ; Na, H; Kim, YW; Seo, HC; Shin, Y; Yoon, E; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.S130 - S133, 2005-06

4
LOW-POWER EXCITON-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS FOR THRESHOLDING LOGIC APPLICATIONS

GOSWAMI, S; Hong, Songcheol; BISWAS, D; BHATTACHARYA, PK; SINGH, J; LI, WQ, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.27, no.3, pp.760 - 768, 1991-03

5
Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition

Kim, Je Hyung; Elmaghraoui, Donia; Leroux, Mathieu; Korytov, Maxim; Vennegues, Philippe; Jaziri, Sihem; Brault, Julien; et al, NANOTECHNOLOGY, v.25, no.30, pp.305703-1 - 305703-11, 2014-08

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