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Showing results 1 to 7 of 7

1
Atomic structure of B-P and self-interstitial-B-P complexes in Si

Moon, CY; Ikini, YS; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S602 - S605, 2003-02

2
Atomic structure of B-related defects and B diffusion in Si predoped with P impurities

Moon, CY; Kim, YS; Chang, Kee-Joo, PHYSICAL REVIEW B, v.69, no.8, pp.085208 - 085208, 2004-02

3
Boron profile narrowing in laser-processed silicon after rapid thermal anneal

Poon, CH; Tan, LS; Cho, Byung Jin; See, A; Bhat, M, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.1, pp.80 - 83, 2004-01

4
Chemical bonding effect of Ge atoms on B diffusion in Si

Bang, J; Kang, J; Lee, WJ; Chang, Kee-Joo; Kim, H, PHYSICAL REVIEW B, v.76, pp.064118 - 064118, 2007-08

5
First-principles study of the atomic structure of B-related defects in crystalline Si predoped with phosphorus

Moon, CY; Kim, YS; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.340, pp.561 - 564, 2003-12

6
Fluorine implantation effect on boron diffusion in Si

Park, YJ; Kim, Jong Jean, JOURNAL OF APPLIED PHYSICS, v.85, no.2, pp.803 - 806, 1999-01

7
Retardation of boron diffusion in SiGe alloy

Bang, Junhyeok; Kim, Hanchul; Kang, Joongoo; Lee, Woo-Jin; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.401, pp.196 - 199, 2007-12

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