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EFFECT OF THE SILICIDATION REACTION CONDITION ON THE GATE OXIDE INTEGRITY IN TI-POLYCIDE GATE LEE, NI; KIM, YW; AHN, ST, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.672 - 677, 1994-01 |
Formation of TiSi2 thin films from chemical vapor deposition using TiI4 Rhee, HS; Jang, TW; Ahn, Byung Tae; Baek, JT, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, pp.121 - 124, 1998-11 |
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