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Showing results 1 to 8 of 8

1
Codoping characteristics of Zn with Mg in GaN

Kim, KS; Han, MS; Yang, GM; Youn, CJ; Lee, HJ; Cho, HK; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.77, no.8, pp.1123 - 1125, 2000-08

2
Domain Matching Epitaxy of Mg-Containing Ag Contact on p-Type GaN

Song, Yang-Hee; Son, Jun-Ho; Yu, Hak-Ki; Lee, Ju-Ho; Jung, Gwan-Ho; Lee, Jeong-Yong; Lee, Jong-Lam, CRYSTAL GROWTH DESIGN, v.11, no.6, pp.2559 - 2563, 2011-06

3
Highly uniform carbon nanotube nanomesh network transistors

Choi, Sung-Jin; Bennett, Patrick; Lee, Dongil; Bokor, Jeffrey, NANO RESEARCH, v.8, no.4, pp.1320 - 1326, 2015-04

4
Impact of Inter layer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

Chandramohan, S.; Kang, Ji Hye; Ryu, Beo Deul; Yang, Jong Han; Kim, Seongjun; Kim, Hynsoo; Park, Jong Bae; et al, ACS APPLIED MATERIALS & INTERFACES, v.5, no.3, pp.958 - 964, 2013-02

5
InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer

Kim, M; Kim, CY; Kwon, Young Se, APPLIED PHYSICS LETTERS, v.84, no.15, pp.2934 - 2936, 2004-04

6
Nanoscale contacts between semiconducting nanowires and metallic graphenes

Kim, Seongmin; Janes, David B.; Choi, Sung-Yool; Ju, Sanghyun, APPLIED PHYSICS LETTERS, v.101, no.6, 2012-08

7
Reduction of gap states of ternary III-V semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP

Seo, JM; Kim, YK; Lee, HG; Chung, YS; Kim, Sehun, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.14, no.3, pp.941 - 945, 1996

8
Top-Down Approaches for 10 nm-Scale Nanochannel: Toward Exceptional H2S Detection

Kang, Hohyung; Joo, Heeeun; Choi, Junghoon; Kim, Yong-Jae; Lee, Yullim; Cho, Soo-Yeon; Jung, Hee-Tae, ACS NANO, v.16, no.10, pp.17210 - 17219, 2022-10

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