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Showing results 1 to 8 of 8

1
HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT

JOSHI, AB; Yoon, Giwan; KIM, JH; LO, GQ; KWONG, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.40, no.8, pp.1437 - 1445, 1993-08

2
HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT

Yoon, Gi-Wan; Han, LK; Kim, GW; Yan, J; Kwong, DL, ELECTRONICS LETTERS, v.31, no.14, pp.1196 - 1198, 1995-07

3
Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst

Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Eom, Daeyong; Yoo, Yang-Seok; et al, NANOTECHNOLOGY, v.26, no.33, pp.335601, 2015-08

4
SENSITIVITY ANALYSIS OF ION-IMPLANTED SILICON-WAFERS AFTER RAPID THERMAL ANNEALING

KIM, YT; JUN, CH; BAEK, JT; Yoo, Hyung Joun, JOURNAL OF ELECTRONIC MATERIALS, v.24, no.10, pp.1413 - 1417, 1995-10

5
Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

Lee, HJ; Ha, JS; Lee, SW; Goto, H; Lee, SH; Cho, MW; Yao, T; et al, APPLIED PHYSICS LETTERS, v.91, pp.892 - 899, 2007-11

6
Surface modification of SiAlON ceramics

Lee, SM; Kim, HT; Baek, SS; Cho, SJ; Kang, Suk-Joong L, SIAIONS, v.237, pp.221 - 226, 2003

7
Thermally nitrided Cu-5.3Cr alloy for application as metallic separators in PEMFCs

Lee, Hye-Youn; Lee, Seok-Hyun; Kim, Jeong-Heon; Kim, Min-Chul; Wee, Dang-Moon, INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, v.33, no.15, pp.4171 - 4177, 2008-08

8
THICKNESS UNIFORMITY AND ELECTRICAL-PROPERTIES OF ULTRATHIN GATE OXIDES GROWN IN N2O AMBIENT BY RAPID THERMAL-PROCESSING

Yoon, Giwan; JOSHI, AB; AHN, J; KWONG, DL, JOURNAL OF APPLIED PHYSICS, v.72, no.12, pp.5706 - 5710, 1992-12

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