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Showing results 1 to 5 of 5

1
A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET

Kim, Myung-Su; Yun, Gyeong-Jun; Kim, Wu-Kang; Seo, Myungsoo; Kim, Da-Jin; Yu, Ji-Man; Han, Joon-Kyu; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.4, pp.521 - 524, 2022-04

2
Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films

Oh, Changyong; Tewari, Amit; Kim, Kyungkwan; Kumar, Ulayil Sajesh; Shin, Changhwan; Ahn, Minho; Jeon, Sanghun, NANOTECHNOLOGY, v.30, no.50, 2019-10

3
Ferroelectricity in CMOS-Compatible Hafnium Oxides Reviving the ferroelectric field-effect transistor technology

Das, Dipjyoti; Khan, Asif Islam, IEEE NANOTECHNOLOGY MAGAZINE, v.15, no.5, pp.20 - 32, 2021-10

4
Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

Yoon, Jae Seok; Tewari, Amit; Shin, Changhwan; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079, 2019-07

5
Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOSCALE, v.12, no.16, pp.9024 - 9031, 2020-04

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