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Showing results 1 to 5 of 5

1
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs

Guan, H; Li, MF; He, YD; Cho, Byung Jin; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08

2
Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxide

Cho, Byung Jin; Xu, Z; Guan, H; Li, MF, JOURNAL OF APPLIED PHYSICS, v.86, no.11, pp.6590 - 6592, 1999-12

3
Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor

Kim, Sung-Ho; Choi, Sung-Jin; Jang, Moon-Gyu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08

4
Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability

Lee, Geon-Beom; Kim, Choong-Ki; Bang, Tewook; Yoo, Min-Soo; Choi, Yang-Kyu, MICROELECTRONICS AND RELIABILITY, v.127, pp.114383, 2021-12

5
Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Kim, Choong-Ki; Jeon, Chang-Hoon; Bae, Hagyoul; Bang, Tewook; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915, 2016-03

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