Browse by Subject III-V semiconductors
Showing results 1 to 15 of 15
| 225 GHz triple-push RTD oscillator with 0.5 mW dc-power consumption Lee, Jooseok; Kim, Maengkyu; Park, Jaehong; Lee, Jongwon, IET Circuits, Devices and Systems, v.14, no.2, pp.209 - 215, 2020-03 |
| Automatic resonant frequency matching of power amplifier by transformer loop sampling Lee, Han-Lim; Jang, Hyeong-Seok; Park, Dong-Hoon; Lee, Moon-Que; Yu, Jong-Won, ELECTRONICS LETTERS, v.51, no.6, pp.510 - 511, 2015-03 |
| Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots Kim, Je-Hyung; Kwon, Bong-Joon; Cho, Yong-Hoon; Huault, Thomas; Leroux, Mathieu; Brault, Julien, APPLIED PHYSICS LETTERS, v.97, no.6, pp.061905 - 061905-3, 2010-08 |
| Carrier transfer and redistribution dynamics in vertically aligned stacked In0.5Ga0.5As quantum dots with different GaAs spacer thicknesses Kwack, Ho-Sang; Cho, Yong-Hoon; Song, Jin-Dong; Choi, Won-Jun; Lee, Jung-Il, JOURNAL OF APPLIED PHYSICS, v.106, no.12, 2009-12 |
| Electroluminescence emission from light-emitting diode of p-ZnO/(InGaN/GaN) multiquantum well/n-GaN Park, Tae-Young; Choi, Yong-Seok; Kim, Sang-Mook; Jung, Gun-Young; Park, Seong-Ju; Kwon, Bong-Joon; Cho, Yong-Hoon, APPLIED PHYSICS LETTERS, v.98, no.25, 2011-06 |
| Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.106, no.5, 2009-09 |
| K-band 0/180 degrees balanced phase shifter with dc-offset cancellation Lee, Han Lim; Moon, Seong-Mo; Dong, Hyun-Jun; Lee, Moon-Que; Yu, Jong-Won, ELECTRONICS LETTERS, v.49, no.19, pp.1234 - 1235, 2013-09 |
| Ka-band VCO with parasitic capacitance cancelling technique Lee, Wonho; Lee, S.; Choi, J.; So, J.; Kwon, Y., ELECTRONICS LETTERS, v.53, no.1, pp.38 - 39, 2017-01 |
| Large Polarization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>x</sub> Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering Suh, Yoonje; Jeong, Jaeyong; Kim, Bong Ho; Kuk, Songhyeon; Kim, Seongkwang; Kim, Joon Pyo; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.45, no.5, pp.766 - 769, 2024-05 |
| Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers Choi M.; Tanaka T.; Sunada S.; Harayama T., APPLIED PHYSICS LETTERS, v.94, no.23, 2009 |
| Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes Kim, Sun-Kyung; Song, Hyun Don; Ee, Ho-Seok; Choi, Hyun Min; Cho, Hyun Kyong; Lee, Yong-Hee; Park, Hong-Gyu, APPLIED PHYSICS LETTERS, v.94, no.10, 2009-03 |
| Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates Shin, Byungha; Weber, Justin R.; Long, Rathnait D.; Hurley, Paul K.; Van de Walle, Chris G.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.15, 2010-04 |
| Polarization-selective resonant photonic crystal photodetector Yang, Jin-Kyu; Seo, Min-Kyo; Hwang, In-Kag; Kim, Sung-Bock; Lee, Yong-Hee, APPLIED PHYSICS LETTERS, v.93, no.21, 2008-11 |
| Terahertz phase microscopy in the sub-wavelength regime Yi, Min-Woo; Lee, Kang-Hee; Song, Jin-Dong; Ahn, Jae-Wook, APPLIED PHYSICS LETTERS, v.100, no.16, 2012-04 |
| Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009 |
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