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Showing results 1 to 4 of 4

1
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

Sun, Yuanping; Sun, Yuanping; Cho, Yong-Hoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.1, pp.128 - 132, 2010-07

2
Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy

Kim, YH; Lee, JeongYong; Lee, SH; Oh, JE; Lee, HS; Huh, Y, CHEMICAL PHYSICS LETTERS, v.412, pp.454 - 458, 2005-09

3
Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

Cho, MH; Moon, P; Kim, HJ; Na, H; Seo, HC; Shin, Y; Moon, DW; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.201, pp.2818 - 2822, 2004-09

4
Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Kwack, Ho-Sang; Kwon, Bong-Joon; Chung, Jin-Soo; Cho, Yong-Hoon; Kwon, Soon-Yong; Kim, Hee Jin; Yoon, Euijoon, APPLIED PHYSICS LETTERS, v.93, no.16, 2008-10

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