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Showing results 1 to 2 of 2

1
Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2

Kerelsky, Alexander; Nipane, Ankur; Edelberg, Drew; Wang, Dennis; Zhou, Xiaodong; Motmaendadgar, Abdollah; Gao, Hui; et al, NANO LETTERS, v.17, no.10, pp.5962 - 5968, 2017-10

2
Impact of Inter layer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

Chandramohan, S.; Kang, Ji Hye; Ryu, Beo Deul; Yang, Jong Han; Kim, Seongjun; Kim, Hynsoo; Park, Jong Bae; et al, ACS APPLIED MATERIALS & INTERFACES, v.5, no.3, pp.958 - 964, 2013-02

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