| 1 | Arrayed MoS2-In0.53Ga0.47As van der Waals Heterostructure for High-Speed and Broadband Detection from Visible to Shortwave-Infrared Light Geum, Dae-Myeong; Kim, Suhyun; Khym, JiHoon; Lim, Jinha; Kim, SeongKwang; Ahn, Seung-Yeop; Kim, Tae Soo; et al, SMALL, v.17, no.17, 2021-04 |
| 2 | Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure Yang, Jung-Gil; Yang, Kyoung-Hoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.19, no.10, pp.647 - 649, 2009-10 |
| 3 | Design and optical characterization of passive pixel with sensitivity-improved InGaAs/InP phototransistors considering light-dependent shunt resistance for near infrared imaging applications Jo, Young Chang; Song, Hong Joo; Choi, Yeon Shik; Kim, Hoon; Park, Hyo Derk; Kwon, Young Se; Choi, Pyong, JAPANESE JOURNAL OF APPLIED PHYSICS, v.46, no.9B, pp.6222 - 6226, 2007-09 |
| 4 | Development of High-Performance Micro/Millimeter-wave Band PIN-Diode MMICs using a BCB-Based Multi-Layer Technology = BCB 기반 다층구조 제작기술을 이용한 고성능 마이크로/밀리미터파 대역 핀-다이오드 집적회로 개발에 대한 연구link Yang, Jung-Gil; 양정길; et al, 한국과학기술원, 2011 |
| 5 | Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.598 - 601, 2023-04 |
| 6 | Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric Bentley, Steven J.; Holland, Martin; Li, Xu; Paterson, Gary W.; Zhou, HP; Ignatova, Olesya; Thoms, Stephen; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496, 2011-04 |
| 7 | Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator Substrate Lee, Subin; Kim, Seongkwang; Han, Jae-Hoon; Song, Jin Dong; Jun, Dong-Hwan; Kim, Sang-Hyeon, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1732 - 1735, 2019-11 |
| 8 | Fabrication and characterization of mmW-band InP/InGaAs PIN phase shifters using a developed BCB-based multi-layer technology = BCB 기반 다층구조를 이용한 밀리미터파 대역 InP/InGaAs PIN phase shifter의 제작 및 특성 분석link Kim, Mun-Ho; 김문호; et al, 한국과학기술원, 2009 |
| 9 | Ka-Band 5-Bit MMIC Phase Shifter Using InGaAs PIN Switching Diodes Yang, Jung-Gil; Yang, Kyoung-Hoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.21, no.3, pp.151 - 153, 2011-03 |
| 10 | Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots Lee, JI; Nam, HD; Choi, WJ; Yu, BY; Song, JD; Hong, Songcheol; Noh, SK; et al, CURRENT APPLIED PHYSICS, v.6, no.6, pp.1024 - 1029, 2006-10 |
| 11 | Microstructural and compositional modification of In0.53Ga0.47As/In0.52Al0.48As multiquantum wells using rapid thermal annealing process Jang, Y. O.; Lee, JeongYong, MATERIALS SCIENCE AND TECHNOLOGY, v.27, no.8, pp.1299 - 1302, 2011-08 |
| 12 | Monolithic integration of InP-Based HEMT and MSM photodiode using InGaAsP (lambda=1.3 mu m) buffer Cha, JH; Kim, JH; Kim, CY; Shin, SH; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.4B, pp.2549 - 2552, 2005 |
| 13 | Open-circuit voltage improvement in InGaAs/InP heterojunction solar cells Kim, CY; Cha, JH; Kim, JH; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.4B, pp.2523 - 2524, 2005 |
| 14 | Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication Song, JD; Choi, WJ; Lee, JI; Lee, JeongYong, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.32, pp.115 - 118, 2006-05 |
| 15 | Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; et al, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04 |
| 16 | The strain relaxation in a lattice-mismatched heterostructure Lim, YS; Lee, JeongYong; Kim, TW, JOURNAL OF CRYSTAL GROWTH, v.200, no.3-4, pp.421 - 426, 1999-04 |
| 17 | Vertical InGaAs Biristor for Sub-1 V Operation Kim, Wu-Kang; Bidenko, Pavlo; Kim, Jongmin; Sim, Jaeho; Han, Joon-Kyu; Kim, Seongkwang; Geum, Dae-Myeong; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.5, pp.681 - 683, 2021-05 |
| 18 | Very Wide Dynamic Range ROIC With Pixel-Level ADC for SWIR FPAs Jo, Young Min; Woo, D. H.; Kang, S. G.; Lee, Hee Chul, IEEE SENSORS JOURNAL, v.16, no.19, pp.7227 - 7233, 2016-10 |
| 19 | 분자선 에피탁시로 InP기판위에 성장된 InGaAs와 InAlAs에피층들에서의 상분리현상 및 결정학적 품위에 관한 연구 = Phase separation and crystalline quality in InGaAs and InAlAs layers grown on InP substrate by MBElink 최정식; Choi, Jung-Sik; et al, 한국과학기술원, 1997 |
| 20 | 초고속 MMIC용 다층구조 InP/InGaAs PIN 스위치의 제작 및 특성 분석 = Fabrication and characterization of multilayer InP/InGaAs PIN switches for high speed mmic applicationslink 양정길; Yang, Jung-Kil; et al, 한국과학기술원, 2007 |
| 21 | 최적화된 Zn Diffusion 과 p-type Ohmic Contact 공정을 이용한 광통신용 Planar-type InGaAs/InP Avalanche Photodiode 의 제작 및 특성 분석 = Fabrication and Characterization of Planar-type InGaAs/InP Avalanche Photodiodes using Optimized Zn Diffusion and p-type Ohmic Contact for Optical Communicationslink 김철규; Kim, Cheol-Gyu; et al, 한국과학기술원, 2011 |
