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Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films Kim, Taeho; Park, Jinsung; Cheong, Byoung-Ho; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.112, no.9, 2018-03 |
Interfacial layer properties of HfO2 films formed by plasma-enhanced atomic layer deposition on silicon Park, PK; Roh, JS; Choi, BH; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.5, pp.F34 - F37, 2006-03 |
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