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Showing results 1 to 3 of 3

1
Comparison of the Pd/Ge/Au/Ni/Au and Pd/Ge/Pd/Ti/Au ohmic contacts to N-type InGaAs

Park, SH; Lee, JM; Lee, TW; Park, MP; Park, Chul Soon; Kim, IH; Kim, JY, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.427 - 431, 1999-06

2
High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

Noh, YY; Kim, DY; Yoshida, Y; Yase, K; Jung, BJ; Lim, E; Shim, Hong Ku, APPLIED PHYSICS LETTERS, v.86, no.4, 2005-01

3
ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

Dora, Y; Han, S; Klenov, D; Hansen, PJ; No, Kwangsoo; Mishra, UK; Stemmer, S; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, pp.575 - 581, 2006-03

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